Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
24.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
9.6 nC @ 10 V
Latime
6.22mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Inaltime
2.38mm
Dimensiune celula
NVD5C684NL
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,74
Buc. (Pe o rola de 2500) (fara TVA)
€ 0,881
Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 0,74
Buc. (Pe o rola de 2500) (fara TVA)
€ 0,881
Buc. (Pe o rola de 2500) (cu TVA)
2500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
24.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
9.6 nC @ 10 V
Latime
6.22mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Inaltime
2.38mm
Dimensiune celula
NVD5C684NL
Temperatura minima de lucru
-55 °C
Detalii produs