Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
49 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
44 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
6.22mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V
Inaltime
2.38mm
Dimensiune celula
NVD5C668NL
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
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Buc. (Intr-un pachet de 5) (fara TVA)
€ 2,356
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 1,98
Buc. (Intr-un pachet de 5) (fara TVA)
€ 2,356
Buc. (Intr-un pachet de 5) (cu TVA)
5
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
49 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
44 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
6.22mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V
Inaltime
2.38mm
Dimensiune celula
NVD5C668NL
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Detalii produs