Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
162 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
34 @ 10 V nC
Lungime
10.67mm
Temperatura maxima de lucru
+150 °C
Latime
9.65mm
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Automotive Standard
AEC-Q101
Inaltime
4.58mm
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Buc. (Pe o rola de 800) (cu TVA)
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Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
162 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
34 @ 10 V nC
Lungime
10.67mm
Temperatura maxima de lucru
+150 °C
Latime
9.65mm
Number of Elements per Chip
1
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.3V
Automotive Standard
AEC-Q101
Inaltime
4.58mm