Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
430 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-563
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Latime
1.3mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
1.7mm
Typical Gate Charge @ Vgs
1.7 nC @ 4.5 V
Inaltime
0.6mm
Temperatura minima de lucru
-55 °C
Tara de origine
Malaysia
Detalii produs
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,08
Buc. (Pe o rola de 4000) (fara TVA)
€ 0,095
Buc. (Pe o rola de 4000) (cu TVA)
4000
€ 0,08
Buc. (Pe o rola de 4000) (fara TVA)
€ 0,095
Buc. (Pe o rola de 4000) (cu TVA)
4000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
430 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-563
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
280 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-6 V, +6 V
Latime
1.3mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
1.7mm
Typical Gate Charge @ Vgs
1.7 nC @ 4.5 V
Inaltime
0.6mm
Temperatura minima de lucru
-55 °C
Tara de origine
Malaysia
Detalii produs