Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Tip pachet
WDFN
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Lungime
3.15mm
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Latime
3.15mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Inaltime
0.75mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
Malaysia
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€ 0,89
Buc. (Pe o rola de 1500) (fara TVA)
€ 1,059
Buc. (Pe o rola de 1500) (cu TVA)
1500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Tip pachet
WDFN
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Lungime
3.15mm
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Latime
3.15mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Inaltime
0.75mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
Malaysia