Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-323
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
10.1 nC @ 10 V, 4.8 nC @ 4.5 V
Latime
1.35mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.9mm
Detalii produs
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,38
Each (Supplied as a Tape) (fara TVA)
€ 0,452
Each (Supplied as a Tape) (cu TVA)
25
€ 0,38
Each (Supplied as a Tape) (fara TVA)
€ 0,452
Each (Supplied as a Tape) (cu TVA)
25
Cumpara in pachete mari
Cantitate | Pret unitar | Per Banda |
---|---|---|
25 - 25 | € 0,38 | € 9,50 |
50 - 100 | € 0,27 | € 6,75 |
125 - 225 | € 0,18 | € 4,50 |
250+ | € 0,16 | € 4,00 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-323
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
10.1 nC @ 10 V, 4.8 nC @ 4.5 V
Latime
1.35mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
0.9mm
Detalii produs