Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
560 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.04mm
Typical Gate Charge @ Vgs
29 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.01mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 55,00
€ 0,11 Buc. (Livrat pe rola) (fara TVA)
€ 66,55
€ 0,133 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
500
€ 55,00
€ 0,11 Buc. (Livrat pe rola) (fara TVA)
€ 66,55
€ 0,133 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
500
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 500 - 950 | € 0,11 | € 5,50 |
| 1000 - 2450 | € 0,09 | € 4,50 |
| 2500 - 4950 | € 0,08 | € 4,00 |
| 5000+ | € 0,07 | € 3,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
560 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.04mm
Typical Gate Charge @ Vgs
29 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.01mm
Temperatura minima de lucru
-55 °C
Detalii produs


