Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
560 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
29 nC @ 4.5 V
Latime
1.4mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.01mm
Detalii produs
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,26
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,309
Buc. (Intr-un pachet de 50) (cu TVA)
50
€ 0,26
Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,309
Buc. (Intr-un pachet de 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
50 - 450 | € 0,26 | € 13,00 |
500 - 1200 | € 0,23 | € 11,50 |
1250 - 2450 | € 0,22 | € 11,00 |
2500 - 4950 | € 0,20 | € 10,00 |
5000+ | € 0,18 | € 9,00 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
560 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
29 nC @ 4.5 V
Latime
1.4mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.01mm
Detalii produs