Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
470 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
17.8 nC @ 4.5 V
Latime
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Inaltime
1.01mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,13
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,155
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,13
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,155
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
470 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
17.8 nC @ 4.5 V
Latime
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Inaltime
1.01mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China