Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.3mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2.9mm
Typical Gate Charge @ Vgs
2.5 nC @ 5 V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.94mm
Detalii produs
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,36
Buc. (Intr-un pachet de 2) (fara TVA)
€ 0,428
Buc. (Intr-un pachet de 2) (cu TVA)
2
€ 0,36
Buc. (Intr-un pachet de 2) (fara TVA)
€ 0,428
Buc. (Intr-un pachet de 2) (cu TVA)
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 98 | € 0,36 | € 0,72 |
100 - 198 | € 0,33 | € 0,66 |
200 - 498 | € 0,27 | € 0,54 |
500 - 998 | € 0,25 | € 0,50 |
1000+ | € 0,23 | € 0,46 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.3mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2.9mm
Typical Gate Charge @ Vgs
2.5 nC @ 5 V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.94mm
Detalii produs