Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
3.1 nC @ 4.5 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
1.01mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,13
Each (Supplied as a Tape) (fara TVA)
€ 0,155
Each (Supplied as a Tape) (cu TVA)
200
€ 0,13
Each (Supplied as a Tape) (fara TVA)
€ 0,155
Each (Supplied as a Tape) (cu TVA)
200
Cumpara in pachete mari
Cantitate | Pret unitar | Per Banda |
---|---|---|
200 - 200 | € 0,13 | € 26,00 |
400 - 800 | € 0,12 | € 24,00 |
1000 - 1800 | € 0,11 | € 22,00 |
2000+ | € 0,10 | € 20,00 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Typical Gate Charge @ Vgs
3.1 nC @ 4.5 V
Latime
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
1.01mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs