Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
313 A
Maximum Drain Source Voltage
40 V
Tip pachet
DFN
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
850 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
143 @ 10 V nC
Latime
5mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.9mm
Inaltime
0.95mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
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Buc. (Pe o rola de 3000) (fara TVA)
€ 2,856
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
313 A
Maximum Drain Source Voltage
40 V
Tip pachet
DFN
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
850 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
167 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
143 @ 10 V nC
Latime
5mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.9mm
Inaltime
0.95mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V