Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
4.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
166 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Latime
5.1mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.1mm
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 2,51
Buc. (Intr-un pachet de 5) (fara TVA)
€ 2,987
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 2,51
Buc. (Intr-un pachet de 5) (fara TVA)
€ 2,987
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 5 | € 2,51 | € 12,55 |
10 - 95 | € 2,05 | € 10,25 |
100 - 245 | € 1,63 | € 8,15 |
250 - 495 | € 1,56 | € 7,80 |
500+ | € 1,36 | € 6,80 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
4.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
166 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Latime
5.1mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.1mm