Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
203 A
Maximum Drain Source Voltage
80 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
85 nC @ 10 V
Latime
5.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.1mm
Inaltime
1.1mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Informatii indisponibile despre stoc
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Buc. (Pe o rola de 1500) (fara TVA)
€ 3,427
Buc. (Pe o rola de 1500) (cu TVA)
1500
€ 2,88
Buc. (Pe o rola de 1500) (fara TVA)
€ 3,427
Buc. (Pe o rola de 1500) (cu TVA)
1500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
203 A
Maximum Drain Source Voltage
80 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
5
Maximum Drain Source Resistance
3.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
85 nC @ 10 V
Latime
5.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.1mm
Inaltime
1.1mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V