Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
250 A
Maximum Drain Source Voltage
60 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
4 + Tab
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
160 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
89 nC @ 10 V
Inaltime
1.05mm
Dimensiune celula
NTMFS5H600NL
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 7,97
Buc. (Intr-un pachet de 5) (fara TVA)
€ 9,484
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 7,97
Buc. (Intr-un pachet de 5) (fara TVA)
€ 9,484
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 7,97 | € 39,85 |
50 - 120 | € 4,80 | € 24,00 |
125 - 245 | € 4,19 | € 20,95 |
250 - 495 | € 4,05 | € 20,25 |
500+ | € 3,90 | € 19,50 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
250 A
Maximum Drain Source Voltage
60 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
4 + Tab
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
160 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
89 nC @ 10 V
Inaltime
1.05mm
Dimensiune celula
NTMFS5H600NL
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Detalii produs