Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
185 A
Maximum Drain Source Voltage
40 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
106 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Inaltime
1.05mm
Dimensiune celula
NTMFS5C430N
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
N-Channel Power MOSFET, 40V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
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Buc. (Intr-un pachet de 5) (cu TVA)
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€ 1,09
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,297
Buc. (Intr-un pachet de 5) (cu TVA)
5
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
185 A
Maximum Drain Source Voltage
40 V
Tip pachet
DFN
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
106 W
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Inaltime
1.05mm
Dimensiune celula
NTMFS5C430N
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Detalii produs