Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
30 V
Tip pachet
SO-8FL
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
11.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
41.7 W
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
5.1mm
Typical Gate Charge @ Vgs
11.3 nC @ 4.5 V, 24.4 nC @ 11.5 V
Latime
6.1mm
Number of Elements per Chip
1
Inaltime
1.1mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Malaysia
Detalii produs
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
1500
P.O.A.
1500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
30 V
Tip pachet
SO-8FL
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
11.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
41.7 W
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
5.1mm
Typical Gate Charge @ Vgs
11.3 nC @ 4.5 V, 24.4 nC @ 11.5 V
Latime
6.1mm
Number of Elements per Chip
1
Inaltime
1.1mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Malaysia
Detalii produs