Documente tehnice
Specificatii
Marca
onsemiChannel Type
N, P
Maximum Continuous Drain Current
250 mA, 880 mA
Maximum Drain Source Voltage
20 V, 30 V
Tip pachet
SOT-363
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
2.5 Ω, 500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
270 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, -12 V, +12 V, +20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Latime
1.35mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,37
Each (Supplied as a Tape) (fara TVA)
€ 0,44
Each (Supplied as a Tape) (cu TVA)
25
€ 0,37
Each (Supplied as a Tape) (fara TVA)
€ 0,44
Each (Supplied as a Tape) (cu TVA)
25
Cumpara in pachete mari
Cantitate | Pret unitar | Per Banda |
---|---|---|
25 - 100 | € 0,37 | € 9,25 |
125 - 225 | € 0,34 | € 8,50 |
250 - 600 | € 0,32 | € 8,00 |
625 - 1225 | € 0,30 | € 7,50 |
1250+ | € 0,29 | € 7,25 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N, P
Maximum Continuous Drain Current
250 mA, 880 mA
Maximum Drain Source Voltage
20 V, 30 V
Tip pachet
SOT-363
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
2.5 Ω, 500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
270 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, -12 V, +12 V, +20 V
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Latime
1.35mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.