Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-363
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Latime
1.35mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,12
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,143
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,12
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,143
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-363
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Latime
1.35mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Inaltime
1mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs