Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
240 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
4.82mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
15.87mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Inaltime
20.82mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 6,09
Each (In a Tube of 30) (fara TVA)
€ 7,247
Each (In a Tube of 30) (cu TVA)
30
€ 6,09
Each (In a Tube of 30) (fara TVA)
€ 7,247
Each (In a Tube of 30) (cu TVA)
30
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
30 - 90 | € 6,09 | € 182,70 |
120 - 240 | € 5,18 | € 155,40 |
270 - 480 | € 5,00 | € 150,00 |
510 - 990 | € 4,83 | € 144,90 |
1020+ | € 4,68 | € 140,40 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-247
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
240 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
4.82mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
15.87mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Inaltime
20.82mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Tara de origine
China