Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
446 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Temperatura maxima de lucru
+150 °C
Lungime
15.87mm
Typical Gate Charge @ Vgs
158 nC @ 10 V
Latime
4.82mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Inaltime
20.82mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 14,41
Each (In a Tube of 30) (fara TVA)
€ 17,148
Each (In a Tube of 30) (cu TVA)
30
€ 14,41
Each (In a Tube of 30) (fara TVA)
€ 17,148
Each (In a Tube of 30) (cu TVA)
30
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
30 - 90 | € 14,41 | € 432,30 |
120 - 240 | € 13,51 | € 405,30 |
270 - 480 | € 13,04 | € 391,20 |
510+ | € 12,59 | € 377,70 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
446 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Temperatura maxima de lucru
+150 °C
Lungime
15.87mm
Typical Gate Charge @ Vgs
158 nC @ 10 V
Latime
4.82mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Inaltime
20.82mm
Temperatura minima de lucru
-55 °C
Tara de origine
China