Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
20 V
Tip pachet
ChipFET
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Latime
1.7mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
3.1mm
Typical Gate Charge @ Vgs
2.6 nC @ 4.5 V
Inaltime
1.1mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Malaysia
Detalii produs
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
20 V
Tip pachet
ChipFET
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Latime
1.7mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
3.1mm
Typical Gate Charge @ Vgs
2.6 nC @ 4.5 V
Inaltime
1.1mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Malaysia
Detalii produs