Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
20 V
Tip pachet
ChipFET
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Lungime
3.1mm
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Latime
1.7mm
Transistor Material
Si
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Detalii produs
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 8,75
€ 0,35 Each (Supplied as a Tape) (fara TVA)
€ 10,59
€ 0,424 Each (Supplied as a Tape) (cu TVA)
Standard
25
€ 8,75
€ 0,35 Each (Supplied as a Tape) (fara TVA)
€ 10,59
€ 0,424 Each (Supplied as a Tape) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
25
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
20 V
Tip pachet
ChipFET
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Lungime
3.1mm
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Latime
1.7mm
Transistor Material
Si
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Detalii produs


