Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
8.4 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
8.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Latime
3.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.7mm
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.65mm
Temperatura minima de lucru
-55 °C
Detalii produs
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 118,00
€ 0,59 Buc. (Livrat pe rola) (fara TVA)
€ 142,78
€ 0,714 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
200
€ 118,00
€ 0,59 Buc. (Livrat pe rola) (fara TVA)
€ 142,78
€ 0,714 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
200
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 200 - 480 | € 0,59 | € 11,80 |
| 500+ | € 0,50 | € 10,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
8.4 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
8.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Latime
3.7mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.7mm
Typical Gate Charge @ Vgs
15 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Inaltime
1.65mm
Temperatura minima de lucru
-55 °C
Detalii produs


