Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
3.13 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.7mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Latime
3.7mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.65mm
Detalii produs
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,81
Buc. (Livrat pe rola) (fara TVA)
€ 0,964
Buc. (Livrat pe rola) (cu TVA)
25
€ 0,81
Buc. (Livrat pe rola) (fara TVA)
€ 0,964
Buc. (Livrat pe rola) (cu TVA)
25
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
3.13 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.7mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Latime
3.7mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.65mm
Detalii produs