Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
915 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-523 (SC-89)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
950 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±6 V
Lungime
1.7mm
Typical Gate Charge @ Vgs
1.82 nC @ 4.5 V
Latime
0.95mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Automotive Standard
AEC-Q101
Inaltime
0.8mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V
Informatii indisponibile despre stoc
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€ 0,06
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,071
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,06
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,071
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
915 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-523 (SC-89)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
950 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±6 V
Lungime
1.7mm
Typical Gate Charge @ Vgs
1.82 nC @ 4.5 V
Latime
0.95mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Automotive Standard
AEC-Q101
Inaltime
0.8mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.1V