Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-523 (SC-89)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Latime
0.95mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
1.7mm
Typical Gate Charge @ Vgs
2.1 nC @ 5 V
Inaltime
0.8mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,10
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,119
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,10
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,119
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-523 (SC-89)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Latime
0.95mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
1.7mm
Typical Gate Charge @ Vgs
2.1 nC @ 5 V
Inaltime
0.8mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs