Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
160 A
Maximum Drain Source Voltage
40 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
120 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Latime
6.22mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
80.6 nC @ 10 V
Forward Diode Voltage
1.2V
Inaltime
2.25mm
Temperatura minima de lucru
-55 °C
Tara de origine
Vietnam
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P.O.A.
2500
P.O.A.
2500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
160 A
Maximum Drain Source Voltage
40 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
120 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Latime
6.22mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
80.6 nC @ 10 V
Forward Diode Voltage
1.2V
Inaltime
2.25mm
Temperatura minima de lucru
-55 °C
Tara de origine
Vietnam