Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
36 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Latime
6.22mm
Transistor Material
Si
Typical Gate Charge @ Vgs
15 nC @ 10 V
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
2.38mm
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,87
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,035
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 0,87
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,035
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 45 | € 0,87 | € 4,35 |
50 - 120 | € 0,69 | € 3,45 |
125 - 245 | € 0,67 | € 3,35 |
250 - 495 | € 0,62 | € 3,10 |
500+ | € 0,57 | € 2,85 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
36 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Latime
6.22mm
Transistor Material
Si
Typical Gate Charge @ Vgs
15 nC @ 10 V
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
2.38mm
Detalii produs