Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
58 A
Maximum Drain Source Voltage
30 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
2.63 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Latime
6.22mm
Transistor Material
Si
Typical Gate Charge @ Vgs
11 nC @ 4.5 V
Temperatura minima de lucru
-55 °C
Inaltime
2.38mm
Detalii produs
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
P.O.A.
Buc. (Intr-un pachet de 20) (fara TVA)
Standard
20
P.O.A.
Buc. (Intr-un pachet de 20) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
20
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
58 A
Maximum Drain Source Voltage
30 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
2.63 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Latime
6.22mm
Transistor Material
Si
Typical Gate Charge @ Vgs
11 nC @ 4.5 V
Temperatura minima de lucru
-55 °C
Inaltime
2.38mm
Detalii produs


