Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
30 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 5 V
Latime
6.22mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
2.38mm
Detalii produs
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,06
Buc. (Livrat pe rola) (fara TVA)
€ 1,261
Buc. (Livrat pe rola) (cu TVA)
5
€ 1,06
Buc. (Livrat pe rola) (fara TVA)
€ 1,261
Buc. (Livrat pe rola) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
5 - 20 | € 1,06 | € 5,30 |
25 - 120 | € 0,74 | € 3,70 |
125 - 620 | € 0,59 | € 2,95 |
625 - 1245 | € 0,51 | € 2,55 |
1250+ | € 0,49 | € 2,45 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
30 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.73mm
Typical Gate Charge @ Vgs
15 nC @ 5 V
Latime
6.22mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
2.38mm
Detalii produs