Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
48 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Transistor Material
Si
Lungime
6.73mm
Typical Gate Charge @ Vgs
16.6 nC @ 5 V
Temperatura maxima de lucru
+175 °C
Latime
6.22mm
Number of Elements per Chip
1
Inaltime
2.38mm
Temperatura minima de lucru
-55 °C
Tara de origine
Malaysia
Detalii produs
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
2500
P.O.A.
2500
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
48 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Transistor Material
Si
Lungime
6.73mm
Typical Gate Charge @ Vgs
16.6 nC @ 5 V
Temperatura maxima de lucru
+175 °C
Latime
6.22mm
Number of Elements per Chip
1
Inaltime
2.38mm
Temperatura minima de lucru
-55 °C
Tara de origine
Malaysia
Detalii produs