Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
9.65mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Inaltime
4.58mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Tara de origine
China
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P.O.A.
800
P.O.A.
800
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Tip pachet
D2PAK (TO-263)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Latime
9.65mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Inaltime
4.58mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.3V
Tara de origine
China