Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
915 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SC-75
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
9.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Temperatura maxima de lucru
+150 °C
Lungime
0.8mm
Typical Gate Charge @ Vgs
1.82 nC @ 4.5 V
Number of Elements per Chip
1
Latime
1.6mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.8mm
Detalii produs
N-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,30
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,357
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 0,30
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,357
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 90 | € 0,30 | € 3,00 |
100 - 190 | € 0,20 | € 2,00 |
200 - 740 | € 0,12 | € 1,20 |
750 - 1490 | € 0,11 | € 1,10 |
1500+ | € 0,09 | € 0,90 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
915 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SC-75
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
9.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Temperatura maxima de lucru
+150 °C
Lungime
0.8mm
Typical Gate Charge @ Vgs
1.82 nC @ 4.5 V
Number of Elements per Chip
1
Latime
1.6mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.8mm
Detalii produs