Documente tehnice
Specificatii
Marca
onsemiDiode Configuration
Single
Direction Type
Uni-Directional
Maximum Clamping Voltage
6.6V
Minimum Breakdown Voltage
6.4V
Montare
Surface Mount
Tip pachet
X2DFN
Maximum Reverse Stand-off Voltage
6.3V
Numar pini
2
Maximum Peak Pulse Current
30A
ESD protection
Yes
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-65 °C
Temperatura maxima de lucru
+150 °C
Dimensiuni
1.05 x 0.65 x 0.35mm
Working Voltage
6.3V
ESD Voltage
8kV
Capacitate
110pF
Lungime
1.05mm
Inaltime
0.35mm
Latime
0.65mm
Test Current
1mA
Maximum Reverse Leakage Current
1µA
Tara de origine
China
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P.O.A.
8000
P.O.A.
8000
Documente tehnice
Specificatii
Marca
onsemiDiode Configuration
Single
Direction Type
Uni-Directional
Maximum Clamping Voltage
6.6V
Minimum Breakdown Voltage
6.4V
Montare
Surface Mount
Tip pachet
X2DFN
Maximum Reverse Stand-off Voltage
6.3V
Numar pini
2
Maximum Peak Pulse Current
30A
ESD protection
Yes
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-65 °C
Temperatura maxima de lucru
+150 °C
Dimensiuni
1.05 x 0.65 x 0.35mm
Working Voltage
6.3V
ESD Voltage
8kV
Capacitate
110pF
Lungime
1.05mm
Inaltime
0.35mm
Latime
0.65mm
Test Current
1mA
Maximum Reverse Leakage Current
1µA
Tara de origine
China