Documente tehnice
Specificatii
Marca
onsemiDiode Configuration
Common Cathode
Timp montare
Surface Mount
Number of Elements per Chip
2
Tip pachet
DPAK (TO-252)
Diode Technology
Silicon Junction
Maximum Forward Voltage Drop
1.2V
Numar pini
3
Frecventa minima de auto-rezonanta
-65 °C
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Latime
6.22mm
Inaltime
2.38mm
Dimensiuni
2.38 x 6.73 x 6.22mm
Detalii produs
Rectifier Diodes, 4A to 9A, ON Semiconductor
Standards
Products with NSV- or S-prefixed Manufacturer Part Nos are AEC-Q101 automotive qualified.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,67
Buc. (Intr-un pachet de 20) (fara TVA)
€ 0,797
Buc. (Intr-un pachet de 20) (cu TVA)
20
€ 0,67
Buc. (Intr-un pachet de 20) (fara TVA)
€ 0,797
Buc. (Intr-un pachet de 20) (cu TVA)
20
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
20 - 80 | € 0,67 | € 13,40 |
100 - 380 | € 0,40 | € 8,00 |
400 - 980 | € 0,38 | € 7,60 |
1000+ | € 0,32 | € 6,40 |
Documente tehnice
Specificatii
Marca
onsemiDiode Configuration
Common Cathode
Timp montare
Surface Mount
Number of Elements per Chip
2
Tip pachet
DPAK (TO-252)
Diode Technology
Silicon Junction
Maximum Forward Voltage Drop
1.2V
Numar pini
3
Frecventa minima de auto-rezonanta
-65 °C
Temperatura maxima de lucru
+175 °C
Lungime
6.73mm
Latime
6.22mm
Inaltime
2.38mm
Dimensiuni
2.38 x 6.73 x 6.22mm
Detalii produs
Rectifier Diodes, 4A to 9A, ON Semiconductor
Standards
Products with NSV- or S-prefixed Manufacturer Part Nos are AEC-Q101 automotive qualified.