Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
140 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Maximum Power Dissipation
225 mW
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Collector Base Voltage
160 V dc
Maximum Emitter Base Voltage
6 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
3.04 x 1.4 x 1.01mm
Detalii produs
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
P.O.A.
Buc. (Intr-un pachet de 100) (fara TVA)
Standard
100
P.O.A.
Buc. (Intr-un pachet de 100) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
100
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
140 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Maximum Power Dissipation
225 mW
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Collector Base Voltage
160 V dc
Maximum Emitter Base Voltage
6 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
3.04 x 1.4 x 1.01mm
Detalii produs
General Purpose NPN Transistors, up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.


