Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
300
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
4.5 V
Maximum Operating Frequency
20 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
3.04 x 1.4 x 1.01mm
Temperatura maxima de lucru
+150 °C
Detalii produs
Low Noise Bipolar Transistors, ON Semiconductor
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,06
Buc. (Livrat pe rola) (fara TVA)
€ 0,071
Buc. (Livrat pe rola) (cu TVA)
100
€ 0,06
Buc. (Livrat pe rola) (fara TVA)
€ 0,071
Buc. (Livrat pe rola) (cu TVA)
100
Documente tehnice
Specificatii
Marca
onsemiTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
30 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
300
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
4.5 V
Maximum Operating Frequency
20 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
3.04 x 1.4 x 1.01mm
Temperatura maxima de lucru
+150 °C
Detalii produs