Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Transistor Configuration
Single
Configuration
Single
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Source Gate On-Capacitance
5pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Temperatura minima de lucru
-55 °C
Lungime
3.04mm
Temperatura maxima de lucru
+150 °C
Latime
1.4mm
Inaltime
1.01mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 22,00
€ 0,22 Buc. (Livrat pe rola) (fara TVA)
€ 26,18
€ 0,262 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 22,00
€ 0,22 Buc. (Livrat pe rola) (fara TVA)
€ 26,18
€ 0,262 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
100 - 240 | € 0,22 | € 2,20 |
250 - 490 | € 0,19 | € 1,90 |
500 - 990 | € 0,16 | € 1,60 |
1000+ | € 0,15 | € 1,50 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Transistor Configuration
Single
Configuration
Single
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Source Gate On-Capacitance
5pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Temperatura minima de lucru
-55 °C
Lungime
3.04mm
Temperatura maxima de lucru
+150 °C
Latime
1.4mm
Inaltime
1.01mm
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.