Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.9 x 1.3 x 0.94mm
Inaltime
0.94mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Latime
1.3mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Incercati din nou mai tarziu
€ 0,33
Buc. (Livrat pe rola) (fara TVA)
€ 0,393
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
€ 0,33
Buc. (Livrat pe rola) (fara TVA)
€ 0,393
Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
50 - 95 | € 0,33 | € 1,65 |
100 - 495 | € 0,29 | € 1,45 |
500 - 995 | € 0,25 | € 1,25 |
1000+ | € 0,23 | € 1,15 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.9 x 1.3 x 0.94mm
Inaltime
0.94mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Latime
1.3mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.