Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Transistor Configuration
Single
Configuration
Single
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.9 x 1.3 x 0.94mm
Inaltime
0.94mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Latime
1.3mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 8,00
€ 0,16 Buc. (Livrat pe rola) (fara TVA)
€ 9,68
€ 0,194 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
50
€ 8,00
€ 0,16 Buc. (Livrat pe rola) (fara TVA)
€ 9,68
€ 0,194 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
50
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 50 - 95 | € 0,16 | € 0,80 |
| 100 - 495 | € 0,14 | € 0,70 |
| 500 - 995 | € 0,12 | € 0,60 |
| 1000+ | € 0,11 | € 0,55 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
24 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Transistor Configuration
Single
Configuration
Single
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.9 x 1.3 x 0.94mm
Inaltime
0.94mm
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Latime
1.3mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


