Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
12 to 30mA
Maximum Drain Source Voltage
25 V
Configuration
Single
Transistor Configuration
Single
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Source Gate On-Capacitance
5pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Inaltime
1.01mm
Latime
1.4mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 300,00
€ 0,10 Buc. (Pe o rola de 3000) (fara TVA)
€ 357,00
€ 0,119 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 300,00
€ 0,10 Buc. (Pe o rola de 3000) (fara TVA)
€ 357,00
€ 0,119 Buc. (Pe o rola de 3000) (cu TVA)
3000
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Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
12 to 30mA
Maximum Drain Source Voltage
25 V
Configuration
Single
Transistor Configuration
Single
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Source Gate On-Capacitance
5pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Inaltime
1.01mm
Latime
1.4mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.