Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Source Gate On-Capacitance
11pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Latime
1.4mm
Inaltime
1.01mm
Frecventa minima de auto-rezonanta
-55 °C
Lungime
3.04mm
Temperatura maxima de lucru
+150 °C
Detalii produs
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 11,00
€ 0,11 Buc. (Livrat pe rola) (fara TVA)
€ 13,31
€ 0,133 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 11,00
€ 0,11 Buc. (Livrat pe rola) (fara TVA)
€ 13,31
€ 0,133 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
100
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 100 - 240 | € 0,11 | € 1,10 |
| 250 - 490 | € 0,10 | € 1,00 |
| 500 - 990 | € 0,09 | € 0,90 |
| 1000+ | € 0,07 | € 0,70 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Source Gate On-Capacitance
11pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Latime
1.4mm
Inaltime
1.01mm
Frecventa minima de auto-rezonanta
-55 °C
Lungime
3.04mm
Temperatura maxima de lucru
+150 °C
Detalii produs
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


