Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Source Gate On-Capacitance
11pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Lungime
3.04mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.01mm
Latime
1.4mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 300,00
€ 0,10 Buc. (Pe o rola de 3000) (fara TVA)
€ 363,00
€ 0,121 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 300,00
€ 0,10 Buc. (Pe o rola de 3000) (fara TVA)
€ 363,00
€ 0,121 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Source Gate On-Capacitance
11pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Lungime
3.04mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.01mm
Latime
1.4mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


