Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Source Gate On-Capacitance
11pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Lungime
3.04mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.01mm
Latime
1.4mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 300,00
€ 0,10 Buc. (Pe o rola de 3000) (fara TVA)
€ 357,00
€ 0,119 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 300,00
€ 0,10 Buc. (Pe o rola de 3000) (fara TVA)
€ 357,00
€ 0,119 Buc. (Pe o rola de 3000) (cu TVA)
3000
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Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Timp montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Source Gate On-Capacitance
11pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Lungime
3.04mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.01mm
Latime
1.4mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
China
Detalii produs
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.