Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
-2 to -25mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
-30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
250 Ω
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.92 x 1.3 x 0.93mm
Temperatura maxima de lucru
+150 °C
Lungime
2.92mm
Inaltime
0.93mm
Latime
1.3mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
P-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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€ 0,41
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€ 0,488
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€ 0,488
Buc. (Livrat pe rola) (cu TVA)
50
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Cantitate | Pret unitar | Per Rola |
---|---|---|
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100 - 950 | € 0,24 | € 12,00 |
1000 - 2950 | € 0,23 | € 11,50 |
3000+ | € 0,23 | € 11,50 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
-2 to -25mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
-30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
250 Ω
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Dimensiuni
2.92 x 1.3 x 0.93mm
Temperatura maxima de lucru
+150 °C
Lungime
2.92mm
Inaltime
0.93mm
Latime
1.3mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
P-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.