Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
-7 to -60mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
125 Ω
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Drain Gate On-Capacitance
11pF
Source Gate On-Capacitance
11pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Inaltime
1.01mm
Latime
1.4mm
Frecventa minima de auto-rezonanta
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Detalii produs
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,09
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,107
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,09
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,107
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
-7 to -60mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
125 Ω
Montare
Surface Mount
Tip pachet
SOT-23
Numar pini
3
Drain Gate On-Capacitance
11pF
Source Gate On-Capacitance
11pF
Dimensiuni
3.04 x 1.4 x 1.01mm
Inaltime
1.01mm
Latime
1.4mm
Frecventa minima de auto-rezonanta
-55 °C
Temperatura maxima de lucru
+150 °C
Lungime
3.04mm
Detalii produs
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.