Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiSub Type
N-Channel Switch
Channel Type
Type N
Product Type
JFET
Configuration
Single
Montare
Surface
Tip pachet
SOT-23
Frecventa minima de auto-rezonanta
-55°C
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-35 V
Maximum Drain Source Resistance Rds
100Ω
Numar pini
3
Drain Source Current Ids
2 mA
Temperatura maxima de lucru
150°C
Standards/Approvals
No
Lungime
2.92mm
Latime
1.3 mm
Inaltime
0.93mm
Automotive Standard
No
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii despre stoc temporar indisponibile
€ 240,00
€ 0,08 Buc. (Pe o rola de 3000) (fara TVA)
€ 290,40
€ 0,097 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 240,00
€ 0,08 Buc. (Pe o rola de 3000) (fara TVA)
€ 290,40
€ 0,097 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiSub Type
N-Channel Switch
Channel Type
Type N
Product Type
JFET
Configuration
Single
Montare
Surface
Tip pachet
SOT-23
Frecventa minima de auto-rezonanta
-55°C
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-35 V
Maximum Drain Source Resistance Rds
100Ω
Numar pini
3
Drain Source Current Ids
2 mA
Temperatura maxima de lucru
150°C
Standards/Approvals
No
Lungime
2.92mm
Latime
1.3 mm
Inaltime
0.93mm
Automotive Standard
No
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


