Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Configuration
Single
Montare
Surface
Tip pachet
SOT-23
Maximum Power Dissipation Pd
350mW
Drain Source Current Ids
2 mA
Temperatura minima de lucru
-55°C
Maximum Gate Source Voltage Vgs
-35 V
Maximum Drain Source Resistance Rds
100Ω
Numar pini
3
Temperatura maxima de lucru
150°C
Inaltime
0.93mm
Latime
1.3 mm
Lungime
2.92mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii despre stoc temporar indisponibile
€ 5,50
€ 0,22 Buc. (Intr-un pachet de 25) (fara TVA)
€ 6,66
€ 0,266 Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
€ 5,50
€ 0,22 Buc. (Intr-un pachet de 25) (fara TVA)
€ 6,66
€ 0,266 Buc. (Intr-un pachet de 25) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
25
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 25 - 75 | € 0,22 | € 5,50 |
| 100 - 225 | € 0,19 | € 4,75 |
| 250 - 475 | € 0,16 | € 4,00 |
| 500 - 975 | € 0,14 | € 3,50 |
| 1000+ | € 0,13 | € 3,25 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Configuration
Single
Montare
Surface
Tip pachet
SOT-23
Maximum Power Dissipation Pd
350mW
Drain Source Current Ids
2 mA
Temperatura minima de lucru
-55°C
Maximum Gate Source Voltage Vgs
-35 V
Maximum Drain Source Resistance Rds
100Ω
Numar pini
3
Temperatura maxima de lucru
150°C
Inaltime
0.93mm
Latime
1.3 mm
Lungime
2.92mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


