Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Configuration
Single
Montare
Surface
Tip pachet
SOT-23
Maximum Drain Source Resistance Rds
50Ω
Numar pini
3
Drain Source Current Ids
5 mA
Frecventa minima de auto-rezonanta
-55°C
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-35 V
Temperatura maxima de lucru
150°C
Latime
1.3 mm
Lungime
2.92mm
Inaltime
0.93mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii despre stoc temporar indisponibile
€ 19,00
€ 0,19 Buc. (Livrat pe rola) (fara TVA)
€ 22,99
€ 0,23 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 19,00
€ 0,19 Buc. (Livrat pe rola) (fara TVA)
€ 22,99
€ 0,23 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
100
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 100 - 225 | € 0,19 | € 4,75 |
| 250 - 475 | € 0,17 | € 4,25 |
| 500 - 975 | € 0,15 | € 3,75 |
| 1000+ | € 0,13 | € 3,25 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Configuration
Single
Montare
Surface
Tip pachet
SOT-23
Maximum Drain Source Resistance Rds
50Ω
Numar pini
3
Drain Source Current Ids
5 mA
Frecventa minima de auto-rezonanta
-55°C
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-35 V
Temperatura maxima de lucru
150°C
Latime
1.3 mm
Lungime
2.92mm
Inaltime
0.93mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


