Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Configuration
Single
Montare
Surface
Tip pachet
SOT-23
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-35 V
Maximum Drain Source Resistance Rds
50Ω
Numar pini
3
Drain Source Current Ids
5 mA
Temperatura minima de lucru
-55°C
Temperatura maxima de lucru
150°C
Latime
1.3 mm
Lungime
2.92mm
Inaltime
0.93mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii despre stoc temporar indisponibile
€ 270,00
€ 0,09 Buc. (Pe o rola de 3000) (fara TVA)
€ 326,70
€ 0,109 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 270,00
€ 0,09 Buc. (Pe o rola de 3000) (fara TVA)
€ 326,70
€ 0,109 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Configuration
Single
Montare
Surface
Tip pachet
SOT-23
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
-35 V
Maximum Drain Source Resistance Rds
50Ω
Numar pini
3
Drain Source Current Ids
5 mA
Temperatura minima de lucru
-55°C
Temperatura maxima de lucru
150°C
Latime
1.3 mm
Lungime
2.92mm
Inaltime
0.93mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


